A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. Abstract “A GaN gate injection transistor (GIT) has great ...

Find the technical paper here. Published August 2023. S. Kim et al., “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET),” in IEEE Access, vol. 11, pp.