Nexperia’s new X.PAK packaging combines high thermal performance, compact size, and easy assembly for high-power applications ...

Today, most converters employ switch-mode topologies. At their core, power transistors switch on and off at high frequency, ...

Leti, a leading European semiconductor research institute, outlined ambitious strategies to address critical AI hardware ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

Polar received up to $123 million through the CHIPS and Science Act to double its U.S. production capacity of sensor and power chips. This direct funding was part of more than $525 million from ...

W GaN converter from STMicroelectronics targets fast chargers, adapters, and power supplies for home appliances.

Innoscience vs Infineon If Innoscience reaches an agreement with EPC, it could then focus on its IP battle with Infineon.

Researchers from Wuhan University in China have developed ultrathin tunnelling junction (PUTJ) technology to address ...

TSMC and Navitas are ramping up GaN production to meet demand in power electronics and RF applications. Meanwhile, SiC is another wide-bandgap material that is transforming power semiconductor design, ...

Analog Bits’ low power Fractional-N / SSCG PLL addresses power sensitive designs required ... The PLL is designed for digital logic processes and use robust design techniques to work in noisy SoC ...

TWO decades after it was inked, decks have been cleared to tap the commercial potential of the India-US civil nuclear deal with an unprecedented regulatory clearance from the US Department of Energy ...

A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...