On March 24, 2025, Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based N-polar gallium nitride on insulator (GaNOI) material ...

A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...

A world-first N-polar GaN wafer created by Chinese ... and a supporting process design kit (PDK) design tool. PDKs are essential tools in semiconductor manufacturing, providing chip designers ...

Innoscience vs Infineon If Innoscience reaches an agreement with EPC, it could then focus on its IP battle with Infineon.

Developed by STMicroelectronics, the quasi-resonant offline converter integrates a 700-V gallium-nitride (GaN) transistor and ... 18 years of his career helping design microprocessors, embedded ...

Researchers from Wuhan University in China have developed ultrathin tunnelling junction (PUTJ) technology to address ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Polar received up to $123 million through the CHIPS and Science Act to double its U.S. production capacity of sensor and power chips. This direct funding was part of more than $525 million from ...

Polar and Renesas will work together to scale commercial production of GaN devices, expanding its use across critical industries, including automotive, data center, consumer, industrial, and aerospace ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...