On March 24, 2025, Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based N-polar gallium nitride on insulator (GaNOI) material ...

Polar and Renesas will work together to scale commercial production of GaN devices, expanding its use across automotive, data ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Polar received up to $123 million through the CHIPS and Science Act to double its U.S. production capacity of sensor and power chips. This direct funding was part of more than $525 million from ...

A world-first N-polar GaN wafer created by Chinese ... and a supporting process design kit (PDK) design tool. PDKs are essential tools in semiconductor manufacturing, providing chip designers ...

This facility, recently expanded with state-of-the-art processing and automation equipment, is poised to meet growing demand for next-generation semiconductor solutions. Polar and Renesas will work ...

As a result, power design engineers often require an external Schottky diode in parallel with the GaN transistor or try to reduce dead-times via their controllers. The new CoolGaN Transistor G5 offers ...

is poised to meet growing demand for next-generation semiconductor solutions. Polar and Renesas will work together to scale commercial production of GaN devices, expanding its use across critical ...