Kioxia’s ninth-generation BiCS FLASH 512 Gb TLC devices, leveraging a 120-layer 3D NAND structure and CMOS-bonded array integration, are now in the sample shipment phase.

Kioxia Corporation, a world leader in memory solutions, today announced it has commenced sample shipments¹ of 512Gb Triple-Level Cell (TLC) memory devices incorporating its 9th generation BiCS FLASHTM ...

Additionally, Kioxia has confirmed that the 512Gb TLC operates at NAND interface speeds of up to 4.8Gb/s 5 under ...