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A double-sided 1200-V/600-A multichip half-bridge insulated gate bipolar transistor (IGBT) module was fabricated utilizing molybdenum as stress-relief buffer and sintered nanosilver as die-attachment.
In this paper, we propose a Rateless codes based two-way relay scheme. In the proposed scheme, two sources exchange their encoded packets through a common relay. During the first time slot, both ...
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