Gate controlled tunnel junctions wherein the PN-junction like potential profile is made by two gates with opposite polarities are currently dominant in the fabrication of 2D material devices.

As an application of graph-based agent-oriented model [1], we simulate the movement of large number of occupants inside a closed tunnel. A pedestrian tunnel provides access to people moving from one ...

We predicted a tunnel magnetoresitance (TMR) ratio of up to 1,000% appears in a ferromagnetic tunnel junction (MTJ) using h-BN as a tunnel barrier.