The Power Conversion and Intelligent Motion (PCIM) Europe exhibition, held annually in Nuremberg, Germany, serves as a pivotal platform for showcasing the latest breakthroughs in power electronics. In ...

At a designer forum dedicated to wide-bandgap technologies, Infineon highlighted the advantages of GaN technology in motor drives. Gallium nitride HEMTs have emerged as a transformative technology in ...

Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on AI Data Center Architecture, Bidirectional GaN Devices, and HV DC-DC Buck Converter! Here’s a RoundUp ...

ME: Absolutely. Thanks a lot for being here at PowerUP. Where are you located, Pietro? PS: I am in Munich today, which is my main location. Let’s say I drive a worldwide team, but on the other side, I ...

ME: Hi Pietro. Thank you for being here. How are you? PS: Very well, Maurizio. Thanks so much for being in this podcast today. ME: Absolutely. Thanks a lot for being here at PowerUP. Where are you ...

Wide-bandgap semiconductor technologies—particularly SiC and GaN—are radically transforming the power electronics industry. Wide-bandgap (WBG) semiconductor technologies—particularly silicon carbide ...

The new isolated flyback transformer offers outstanding high-voltage performance, making it perfectly suited for use in industrial, automotive, medical, and telco applications. Sumida, a globally ...

Infineon’s radiation-hardened GaN transistors are specifically designed for mission-critical applications in on-orbit satellites, crewed space missions, and deep-space exploration probes. Infineon ...

This article presents a high-voltage DC-to-DC buck converter based on the LM5164 synchronous step-down regulator. Designed to handle input voltages ranging from 15V to 95V, the converter efficiently ...

Through its partnership with NVIDIA, Infineon is supporting the shift to a radically new 800V HVDC system, leveraging advanced technologies such as GaN and SiC. As artificial intelligence (AI) and ...

The new model 4340 features a microcontroller with smart charge logic that maximizes battery cells performance. Mascot, a leading power design specialist, proudly unveils its latest innovation: the ...

GaN-on-Si is the technology of choice for commercially available power HEMT devices. The dominant maximum operating voltage range for these devices is currently at 650 V or lower. Challenges arise in ...