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A self-aligned via(SAV) process was employed to build 64nm pitch Dual-Damascene(DD) interconnects using a pitch split double exposure pattering scheme to form the Cu lines. TiN hardmask (HM) density ...

This work demonstrates the building of 64 nm pitch copper single and dual damascene interconnects using pitch split double patterning scheme to enable sub 80 nm pitch patterning. A self-aligned-via ...