Tohoku University. "A new-structure magnetic memory device developed." ScienceDaily. ScienceDaily, 22 March 2016. <www.sciencedaily.com / releases / 2016 / 03 / 160322110305.htm>.

The research group of Professor Hideo Ohno and Associate Professor Shunsuke Fukami of Tohoku University has developed a new-structure magnetic memory device utilizing spin-orbit- torque-induced ...

ReRAM, or Resistive Random-Access Memory, is an emerging non-volatile memory technology that holds promise for the next generation of data storage devices. It is based on the principle of changing the ...

Named PoX, the non-volatile memory significantly outperforms even the fastest volatile memory types, Static Random-Access Memory (SRAM) and Dynamic Random-Access Memory (DRAM), which typically ...