are possible due to low power dissipation as well as other factors. CMOS, which means Complementary Metal Oxide Semiconductor, is based on combining two polarities of MOSFETS; Metal Oxide ...

A new compact package design enables a 65% larger die size, unlocking ultra-low ON-resistance and wide SOA capability—ideal ...

Nexperia’s new X.PAK packaging combines high thermal performance, compact size, and easy assembly for high-power applications ...

The latest graphics processing units (GPUs), such as the Blackwell B100 and B200 at the heart of NVIDIA’s latest AI ...

ROHM has developed N-channel power MOSFETs with industry-leading low ON resistance and wide SOA capability. They are designed for power supplies inside high-performance enterprise and AI servers.

and power dissipation under 1 pW. Measurements indicated low subthreshold swing values of 4 mV/Dec at 5.6 K, indicating low disorder in the MOSFET channels. The CMOS logic operated effectively at ...

ROHM Semiconductor has developed N-channel power MOSFETs featuring industry-leading* low ON-resistance and wide SOA capability. They are designed for power supplies inside high-performance enterprise ...

Moreover, ROHM has optimized the internal clip design to enhance heat dissipation ... ROHM plans to gradually begin mass production of power MOSFETs compatible with hot-swap controller circuits ...