The semiconductor element of this diode-thyristor is shown in Figure 8. Figure 6 High-voltage impulse diode-thyristors are produced on the basis of 4-layer thyristor elements with integrated ...

2. Experimental setup of the bridging-droplet thermal diode. (a) Photograph of the wicked copper plate possessing an array of wetted micropillars of dimensions 100 × 100 × 600 μm.

Bidirectional 1200 V GaN switch (MBDS) with integrated free-wheeling diodes. Researchers at Fraunhofer IAF have developed a GaN MBDS suitable for the 1200 V voltage class with integrated free ...