A team of engineers at Fudan University has successfully designed, built and run a 32-bit RISC-V microprocessor that uses molybdenum disulfide instead of silicon as its semiconductor component.
Multi-Level Cell Structure for Capacitor-Less 1T DRAM With SiGe-Based Separated Data Storing Regions
Abstract: One-transistor dynamic random-access memory (1T DRAM) offers significant advantages in fabrication process and scalability over the traditional one-transistor one-capacitor (1T-1C) DRAM due ...
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan ...
Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062 Dresden, Germany ...
Crystal Palace beat arch-rivals Brighton 2-1 in an action-packed game that had three red cards.
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