Flash memory is going to hit a brick wall at about 20 nanometers. But how do we get beyond that? Well, our technique is perfectly suited for sub-10-nanometer circuits," he said.

They are many times faster than flash memory and require significantly less energy: memristive memory cells could revolutionize the energy efficiency of neuromorphic computers. In these computers ...

NOR flash memory wiring and structure on silicon (Credit: Cyferz, Wikimedia) To write a NOR Flash cell (set it to logical ‘0’), an elevated voltage is applied to the control gate, inducing HCI.

Based on Toshiba Memory's innovative BiCS FLASH™ 3D flash memory technology with 1-bit-per-cell SLC, XL-FLASH™ brings low latency and high performance to data center and enterprise storage.

The 128Gb NAND flash memory chip was developed jointly by teams from SanDisk and Toshiba at SanDisk’s Milpitas campus. The effort was led by Yan Li, director of Memory Design at SanDisk.

Macronix, one of the world's largest producers of flash memory, has produced a new kind of flash memory that can survive more than 100 million program/erase (PE) cycles -- most likely long enough ...