Engineers have developed a new-structure magnetic memory device utilizing spin-orbit torque-induced magnetization switching. The research group of Professor Hideo Ohno and Associate Professor ...

The research group of Professor Hideo Ohno and Associate Professor Shunsuke Fukami of Tohoku University has developed a new-structure magnetic memory device utilizing spin-orbit- torque-induced ...

Named PoX, the non-volatile memory significantly outperforms even the fastest volatile memory types, Static Random-Access Memory (SRAM) and Dynamic Random-Access Memory (DRAM), which typically ...