Engineers have developed a new-structure magnetic memory device utilizing spin-orbit torque-induced magnetization switching. The research group of Professor Hideo Ohno and Associate Professor ...

The research group of Professor Hideo Ohno and Associate Professor Shunsuke Fukami of Tohoku University has developed a new-structure magnetic memory device utilizing spin-orbit- torque-induced ...

ReRAM, or Resistive Random-Access Memory, is an emerging non-volatile memory technology that holds promise for the next generation of data storage devices. It is based on the principle of changing the ...

Named PoX, the non-volatile memory significantly outperforms even the fastest volatile memory types, Static Random-Access Memory (SRAM) and Dynamic Random-Access Memory (DRAM), which typically ...