Tohoku University. "A new-structure magnetic memory device developed." ScienceDaily. ScienceDaily, 22 March 2016. <www.sciencedaily.com / releases / 2016 / 03 / 160322110305.htm>.

A new-structure magnetic memory device developed Peer-Reviewed Publication Tohoku University image: Schematics of structures for three kinds of spin-orbit-torque-induced magnetization scheme.

3D diagram showing the structure of a ReRAM device. The top and bottom electrodes are connected by vertical pillars that can switch between low-resistance (LRS) and high-resistance (HRS) states to ...

Named PoX, the non-volatile memory significantly outperforms even the fastest volatile memory types, Static Random-Access Memory (SRAM) and Dynamic Random-Access Memory (DRAM), which typically ...