The Schottky diode is able to turn off faster, so it can handle a much higher frequency. There are other exotic diodes including PIN diodes, Gunn diodes and more.

In hard-switching designs, GaN devices can suffer from higher power losses due to body diode behavior, especially with long controller dead times. CoolGaN G5 transistors address this by integrating a ...

The plan is to build an AC to DC Flyback power supply, 12V-3A output. The output Schottky diode must be at least 8A to 10A, 100V rated (dependent on the reflected voltage, VOR). The selection could be ...

A Schottky diode used for power measurements in cellular phone systems. The specific RF power meter illustrated in Figure 1 was engineered to evaluate modulated Radio Frequency signals employed in ...

The Diode Inside: How Infineon’s Integrated Schottky Saves Power. There are some tradeoffs to this architecture, which Infineon is trying to address with its latest GaN power transistor.

A vertical Ga2O3 junction-barrier Schottky (JBS) diode is fabricated using selective p-NiO/n-Ga2O3 heterojunction and applied in temperature sensing. Compared with the Schottky barrier diode (SBD), ...

This study presents the fabrication of vertical GaN junction barrier Schottky (JBS) diodes by using magnesium (Mg) ion implantation on a channeling condition and subsequent ultrahigh-pressure ...

650V SiC Schottky diode drops 1.2V Toshiba has announced twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon its 3rd generation technology. In this series, called TRSxxx65H, ...