A new technical paper titled “Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors” was published by researchers at The Pennsylvania State ...

Fig 8. Simulated wave form result of proposed 7T SRAM cell. V. CONCLUSION . The 7T cell scheme is presented for wide-bit SRAMs. A simulated cell was designed in 0.35µm CMOS technology, and correct ...