Abstract: The aim of this paper is to analyze the planar SiC MOSFETs behavior under power cycle current flow on body diode. In particular, the activity highlights how this type of trials, in addition ...

The researchers developed a testbench for evaluating the surge-current capability of the chosen GaN PSJ diode. The circuit diagram demonstrates the setup, which uses an autotransformer T2 to regulate ...

This helps to increase the peak avalanche current, peak dissipation power, and energy loss.Characteristic curves of current and voltage of the symmetric avalanche suppressor with the new structure are ...

Bidirectional 1200 V GaN switch (MBDS) with integrated free-wheeling diodes. Researchers at Fraunhofer IAF have developed a GaN MBDS suitable for the 1200 V voltage class with integrated free ...

The aim of this paper is to analyze the planar SiC MOSFETs behavior under power cycle current flow on body diode. In particular, the activity highlights how this type of trials, in addition to ...