Field-effect transistors fabricated from carbon nanotubes have been investigated extensively over the past two decades. This study demonstrates a nanotube-based integrated circuit design that ...

This made me look at the turn-off specs for the npn (a 2N2222A) and, for the first time I can remember, I noticed that the turn-off test circuit in the data sheet used a negative drive to the base.

Find the technical paper here. Published August 2023. S. Kim et al., “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET),” in IEEE Access, vol. 11, pp.