F. Hattori, Y. Yanagisawa, J. Imaoka and M. Yamamoto, “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor,” in IEEE Access, doi: 10.1109/ACCESS.2023.3270261. Related Reading GaN Power ...

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...

That left the gate. In the previous 1 nanometer device, the gate was made of a single carbon nanotube. Getting smaller than that is difficult but not impossible.