A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. Abstract “A GaN gate injection transistor (GIT) has great ...

Research paper from KAIST and Gachon University. Abstract “Multi-valued logic (MVL) circuits based on heterojunction transistor (HTR) have emerged as an effective strategy for high-density information ...

Source-gated transistors – SGTs – are uni-polar – they only need n or p-type semiconductor, not both. The research team built two two-transistor building blocks: A polysilicon gain block with the ...