F. Hattori, Y. Yanagisawa, J. Imaoka and M. Yamamoto, “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor,” in IEEE Access, doi: 10.1109/ACCESS.2023.3270261. Related Reading GaN Power ...

Vertically stacked, low-voltage organic ternary logic circuits including nonvolatile floating-gate memory transistors. ... “Multi-valued logic (MVL) circuits based on heterojunction transistor (HTR) ...

Rapidus has begun prototyping 2nm gate-all-around transistor structures at its IIM-1 fab in Japan as it prepares for 2027 ...

Source-gated transistors – SGTs – are uni-polar – they only need n or p-type semiconductor, not both. The research team built two two-transistor building blocks: A polysilicon gain block with the ...