LSCT30PV120B9G is superior in silicon carbide full bridge with rectifier module. Its VDSS index reached 1200V. The model has On State Resistance of 88mΩ and a Total Gate Charge of 347nc. Thermal ...

Chinese firm Lakesemi has developed a new generation SiC full bridge with rectifier module — LSCT30PV120B9G. This new 1200V module is said to have low on-resistance of 88mΩ and a total gate charge of ...

Module is suitable for welding, charger and SMPS applications rated from 1.5 to 7kW. Device combines a rectifier with efficient low-voltage drop diodes, a two legs PFC featuring 650V IGBTs and diodes, ...

With a typical power-conversion efficiency of 96%, the Flatpack2 HE rectifier module suits use in telecommunications applications. The 48/2000 ac/dc power rectifier provides a stand-alone 48V ...

Nexperia has partnered with KYOCERA AVX Components (Salzburg) to produce a novel silicon carbide (SiC) rectifier module for high frequency power applications. The new power device is designed for ...