Various non-volatile memories—including resistive memory, phase-change memory and flash memory— have been used for such approaches. However, it remains challenging to develop a crossbar array of ...

Where 12 defines the addressable range, 32 defines the data width, model_id is a unique user defined identifier for the memcore and the instance_handle is the returned unique identifier used in ...

A technical paper titled “Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array” was published by researchers at Samsung Electronics and ...

Sandisk has appointed two leading figures in computing to help shape the direction of its high-capacity memory tech for AI ...

NMAMIT, Nitte, Udupi 574 110, India In this study, the schematics for Magnetic Tunnel Junction-Magnetoresistive Random Access Memory (MTJ-MRAM) are designed and simulations are carried out in 45 and ...

This innovative array, measuring a compact 0.7 × 0.7 cm 2, integrates the capabilities of sensing, memory, and processing to mimic the intricate functions of the human visual system.