To support high-power and high current applications, it is necessary to utilize multiple discrete SiC MOSFETs in parallel. The current sharing among these parallel switches and reliable operation are ...

The model was then applied to simulate mechanical stress in transistors with various design attributes for Diffusion Breaks (Single vs. Double Diffusion Break) and Gate Cuts, following by modeling of ...

Understanding the changes and design strategies that finFET requires is crucial to building an effective layout. In this post, we’ll talk about how these changes influence integrated circuit layout.

The following example shows the case of a circuit (figure 3) and layout implementation (figure 4) for the 1ED44175N01B and a TO-247 IGBT (e.g. IKW40N65WR5). With this design, it is possible to reduce ...