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In a GAA transistor, the gate oxide surrounds the channel in all directions. A key process during the fabrication of GAA transistors involves the channel release step. This process step is used to ...
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IEEE Spectrum on MSNLearning Analog System Design With the MOSbius
The MOSbius chip [top left] contains all the transistors required for many analog systems. Mounted on a breadboard via a ...
Yes Sir we're already talking about 2nm folks. DigiTimes has an interesting piece up claiming that the 2nm node would introduce something called "gate all around transistors" replacing FinFET with ...
Researchers at the Manisa Celal Bayar University in Turkey have proposed using a skived-type aluminum heat sink (HS) to cool insulated gate bipolar transistor (IGBT) arrays in solar PV inverters.
Wonryung Lee, Dongmin Kim, Naoji Matsuhisa, Masae Nagase, Masaki Sekino, George G. Malliaras, Tomoyuki Yokota, Takao Someya, Transparent, conformable, active multielectrode array using organic ...
And the length of the gate was the thickness of the graphene sheet—a single carbon atom, or 0.34 nanometers. From there, the team simply placed source and drain electrodes on either side of the ...
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