Gate-all-around (GAA) architectures are an example of this type of 3D device [2]. In a GAA transistor, the gate oxide surrounds the channel in all directions. A key process during the fabrication of ...

Yes Sir we're already talking about 2nm folks. DigiTimes has an interesting piece up claiming that the 2nm node would introduce something called "gate all around transistors" replacing FinFET with ...

For AMIS, meanwhile, the driving issue was not just performance but the need to develop a gate array architecture to which FPGA designs could easily port. Again, the key ideas were a relatively ...

While there are a number of measures for the size of the transistor, the gate length is one of the most important. Silicon is probably the most famous semiconductor, but there are atomically thin ...

TSMC's 3nm process will be its last to use FinFET transistors. After that it will be moving to a gate-all-around nanosheet at 2nm.

Interface States in Gate Stack of Carbon Nanotube Array Transistors Interface States in Gate Stack of Carbon Nanotube Array Transistors. Journal: ACS Nano Published: 2024-07-23 DOI: ...