Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...

A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...

A research team led by Runxian Xing et al. has achieved a significant breakthrough by leveraging N-polar AlGaN/GaN HEMTs to generate high-power THz radiation through plasma wave instability.

IQE, a maker of compound semiconductor wafer products, and the analogue/mixed signal foundry X-FAB have announced a Joint ...

All GaN HEMTs are n-channel – there in no equivalent to a p-channel mosfet or pnp transistor. Instead of p-channel fets as high-side devices, in this circuit depletion-mode 12V HEMTs are used as ...

GaN Systems is claiming up to 96% power efficiency from a 200 + 200W (8Ω) Class-D stereo amplifier built around its gallium nitride power transistors. THD+N is under 0.03%, with further optimisation ...

Researchers have demonstrated a novel approach to generating terahertz (THz) radiation using N-polar AlGaN/GaN high-electron-mobility transistors ...

A world-first N-polar GaN wafer created by Chinese scientists could ... silicon-based GaN devices and a supporting process design kit (PDK) design tool. PDKs are essential tools in semiconductor ...