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powerelectronicsworld.net
High inversion channel mobility in 1.4 kV vertical GaN MIS-FET - News
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Infineon opens the world’s largest SiC power semiconductor fab in ...
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US lab wins $1M grant to boost SiC module voltages - News
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Boosting the blocking voltage of birectional HEMTs - Power Electronic…
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EU project to develop 1200V DC powertrain - Power Electronics Worl…
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Infineon develops first 300mm power GaN wafer - News
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Vermont GaN Tech Hub awarded nearly $24M - News
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ST unveils next generation SiC - News
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A debut for the native AlN transistor - News
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SiC market will be worth $10B by 2029 - News
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4-inch gallium oxide facility established in Swansea - Power ...
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Onsemi launches SiC-based IPMs - Power Electronics World News
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Mazda and Rohm collaborate on automotive GaN - Power Electronics …
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Mazda and Rohm collaborate on automotive GaN - Power Electronics …
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BelGaN's production site has three bidders - Power Electronics World N…
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Infineon unveils next-gen vertical power modules - Power Electronics ...
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Infineon introduces CoolGaN Drive family - News
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TU Graz and Silicon Austria Labs launch power lab - Power Electronics ...
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ST announces intelligent circuit breaker - News
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SiC slowdown is only short term, says Yole - Power Electronics World News
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Allegro to show new power products at electronica - News
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GaN-IGBT combo targets EV powertrains over 100kW - Power Ele…
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Renesas REXFET-1 process means better MOSFETs - News
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UK universities win £7m grant to develop sustainable electrification ...
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Infineon unveils next-gen vertical power modules - Power Electronics ...
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Infineon unveils next-gen vertical power modules - Power Electronics ...
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Infineon unveils next-gen vertical power modules - Power Electronics ...
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